на замовлення 800 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1249.24 грн |
| 10+ | 858.34 грн |
| 25+ | 672.99 грн |
| 100+ | 565.11 грн |
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Технічний опис NVBG023N065M3S onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V, Qualification: AEC-Q101.
Інші пропозиції NVBG023N065M3S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVBG023N065M3S | Виробник : onsemi |
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
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| NVBG023N065M3S | Виробник : onsemi |
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |