NVBG045N065SC1 onsemi

Description: SIC MOS D2PAK-7L 650V, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.3V @ 8mA, Power Dissipation (Max): 242W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).