NVBG060N090SC1 onsemi
Виробник: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
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Технічний опис NVBG060N090SC1 onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V, Power Dissipation (Max): 3.6W (Ta), 211W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V, Qualification: AEC-Q101.
Інші пропозиції NVBG060N090SC1 за ціною від 682.22 грн до 1355.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVBG060N090SC1 | onsemi |
Description: SIC MOS N-CH 900V 5.8A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V Qualification: AEC-Q101 |
на замовлення 307671 шт: термін постачання 21-31 дні (днів) |
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NVBG060N090SC1 | onsemi |
SiC MOSFETs 60MOHM |
на замовлення 1003 шт: термін постачання 21-30 дні (днів) |
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| NVBG060N090SC1 | ON Semiconductor |
|
на замовлення 594 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| NVBG060N090SC1 |
|
Виробник: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
на замовлення 307671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1199.55 грн |
| 10+ | 822.13 грн |
| 100+ | 776.24 грн |
| NVBG060N090SC1 |
|
Виробник: onsemi
SiC MOSFETs 60MOHM
SiC MOSFETs 60MOHM
на замовлення 1003 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1355.59 грн |
| 10+ | 951.58 грн |
| 100+ | 730.40 грн |
| 500+ | 682.22 грн |
| NVBG060N090SC1 |
|
Виробник: ON Semiconductor
на замовлення 594 шт:
термін постачання 14-28 дні (днів)