NVBG089N65S3F onsemi
Виробник: onsemiDescription: SF3 FRFET AUTO, 89MOHM, D2PAK 7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 5V @ 970µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 369.12 грн |
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Технічний опис NVBG089N65S3F onsemi
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V, Power Dissipation (Max): 291W (Tc), Vgs(th) (Max) @ Id: 5V @ 970µA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVBG089N65S3F за ціною від 380.76 грн до 768.49 грн
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NVBG089N65S3F | Виробник : onsemi |
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V Power Dissipation (Max): 291W (Tc) Vgs(th) (Max) @ Id: 5V @ 970µA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVBG089N65S3F | Виробник : onsemi |
MOSFETs Single N-Channel Power MOSFET SUPERFET III, FRFET, 650 V , 37 A, 89 mohm, D2PAK 7 lead SuperFET III 650V 89mohm D2PAK 7 Lead |
товару немає в наявності |