NVBG160N120SC1 onsemi
Виробник: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
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Технічний опис NVBG160N120SC1 onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V, Qualification: AEC-Q101.
Інші пропозиції NVBG160N120SC1 за ціною від 412.32 грн до 886.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVBG160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 19.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 1181 шт: термін постачання 21-31 дні (днів) |
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NVBG160N120SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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| NVBG160N120SC1 | ON Semiconductor |
|
на замовлення 630 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| NVBG160N120SC1 |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1181 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 877.77 грн |
| 10+ | 587.87 грн |
| 100+ | 472.48 грн |
| NVBG160N120SC1 |
|
Виробник: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V
SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 886.44 грн |
| 10+ | 631.42 грн |
| 100+ | 441.93 грн |
| 500+ | 412.32 грн |
| NVBG160N120SC1 |
|
Виробник: ON Semiconductor
на замовлення 630 шт:
термін постачання 14-28 дні (днів)