NVBLS1D7N08H ONSEMI
Виробник: ONSEMI
Description: ONSEMI - NVBLS1D7N08H - Leistungs-MOSFET, n-Kanal, 80 V, 241.3 A, 0.0017 ohm, TO-LL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 241.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 237.5W
Gate-Source-Schwellenspannung, max.: 2.9V
euEccn: NLR
Verlustleistung: 237.5W
Bauform - Transistor: TO-LL
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00129ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0017ohm
SVHC: Lead (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 100+ | 165.28 грн |
| 500+ | 147.37 грн |
| 1000+ | 128.28 грн |
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Технічний опис NVBLS1D7N08H ONSEMI
Description: ONSEMI - NVBLS1D7N08H - Leistungs-MOSFET, n-Kanal, 80 V, 241.3 A, 0.0017 ohm, TO-LL, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 241.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 237.5W, Gate-Source-Schwellenspannung, max.: 2.9V, euEccn: NLR, Verlustleistung: 237.5W, Bauform - Transistor: TO-LL, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.00129ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0017ohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції NVBLS1D7N08H за ціною від 128.28 грн до 351.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVBLS1D7N08H | ONSEMI |
Description: ONSEMI - NVBLS1D7N08H - Leistungs-MOSFET, n-Kanal, 80 V, 241.3 A, 0.0017 ohm, TO-LL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 241.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.9V euEccn: NLR Verlustleistung: 237.5W Bauform - Transistor: TO-LL Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0017ohm SVHC: Lead (25-Jun-2025) |
на замовлення 1989 шт: термін постачання 21-31 дні (днів) |
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNEL Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 1178 шт: термін постачання 21-31 дні (днів) |
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NVBLS1D7N08H | onsemi |
MOSFETs MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mohm, 241 A |
на замовлення 3636 шт: термін постачання 21-30 дні (днів) |
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| NVBLS1D7N08H |
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Виробник: ONSEMI
Description: ONSEMI - NVBLS1D7N08H - Leistungs-MOSFET, n-Kanal, 80 V, 241.3 A, 0.0017 ohm, TO-LL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 241.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.9V
euEccn: NLR
Verlustleistung: 237.5W
Bauform - Transistor: TO-LL
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0017ohm
SVHC: Lead (25-Jun-2025)
Description: ONSEMI - NVBLS1D7N08H - Leistungs-MOSFET, n-Kanal, 80 V, 241.3 A, 0.0017 ohm, TO-LL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 241.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.9V
euEccn: NLR
Verlustleistung: 237.5W
Bauform - Transistor: TO-LL
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0017ohm
SVHC: Lead (25-Jun-2025)
на замовлення 1989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 300.96 грн |
| 10+ | 191.60 грн |
| 100+ | 165.28 грн |
| 500+ | 147.37 грн |
| 1000+ | 128.28 грн |
| NVBLS1D7N08H |
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Виробник: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 341.75 грн |
| 10+ | 219.68 грн |
| 100+ | 179.89 грн |
| 500+ | 165.55 грн |
| NVBLS1D7N08H |
|
Виробник: onsemi
MOSFETs MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mohm, 241 A
MOSFETs MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mohm, 241 A
на замовлення 3636 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 351.12 грн |
| 10+ | 217.23 грн |
| 100+ | 164.22 грн |
| 500+ | 157.88 грн |
| 1000+ | 149.42 грн |
| 2000+ | 139.56 грн |