NVC6S5A354PLZT1G ON Semiconductor

Description: MOSFET P-CH 60V 4A 6CPH, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Grade: Automotive, Supplier Device Package: 6-CPH, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1.9W (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6.