на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.63 грн |
| 10+ | 49.09 грн |
| 100+ | 29.1 грн |
| 500+ | 24.31 грн |
| 1000+ | 20.71 грн |
| 2500+ | 18.78 грн |
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Технічний опис NVD3055-150T4G-VF01 onsemi
Description: MOSFET N-CH 60V 9A DPAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVD3055-150T4G-VF01
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NVD3055-150T4G-VF01 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 9A Automotive 3-Pin(2+Tab) DPAK T/R |
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NVD3055-150T4G-VF01 | Виробник : onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVD3055-150T4G-VF01 | Виробник : onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |