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NVD5805NT4G-VF01

NVD5805NT4G-VF01 onsemi


NTD5805N-D.PDF Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис NVD5805NT4G-VF01 onsemi

Description: SINGLE N-CHANNEL POWER MOSFET 40, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V, Qualification: AEC-Q101.

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NVD5805NT4G-VF01 NVD5805NT4G-VF01 Виробник : onsemi NTD5805N_D-1813741.pdf MOSFETs NFET DPAK 40V 51A 9.5MOHM
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