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NVD5862NT4G-VF01

NVD5862NT4G-VF01 onsemi


nvd5862n-d.pdf Виробник: onsemi
Description: NFET DPAK 60V 98A 5.7MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Power Dissipation (Max): 4.1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис NVD5862NT4G-VF01 onsemi

Description: NFET DPAK 60V 98A 5.7MOHM, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V, Power Dissipation (Max): 4.1W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Qualification: AEC-Q101.

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NVD5862NT4G-VF01 NVD5862NT4G-VF01 Виробник : onsemi NVD5862N_D-2319372.pdf MOSFET NFET DPAK 60V 98A 5.7MOHM
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