NVD5C688NLT4G onsemi
Виробник: onsemi
Description: MOSFET N-CHANNEL 60V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 60V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 45.22 грн |
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Технічний опис NVD5C688NLT4G onsemi
Description: MOSFET N-CHANNEL 60V 17A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVD5C688NLT4G за ціною від 40.79 грн до 166.32 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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NVD5C688NLT4G | Виробник : onsemi |
Description: MOSFET N-CHANNEL 60V 17A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4845 шт: термін постачання 21-31 дні (днів) |
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NVD5C688NLT4G | Виробник : onsemi | MOSFET T6 60V LL DPAK |
на замовлення 9137 шт: термін постачання 21-30 дні (днів) |
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NVD5C688NLT4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 27.4mΩ Type of transistor: N-MOSFET Power dissipation: 9W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 12A |
на замовлення 2081 шт: термін постачання 21-30 дні (днів) |
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NVD5C688NLT4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 27.4mΩ Type of transistor: N-MOSFET Power dissipation: 9W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 12A кількість в упаковці: 1 шт |
на замовлення 2081 шт: термін постачання 7-14 дні (днів) |
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NVD5C688NLT4G | Виробник : ON Semiconductor | Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2+Tab) DPAK T/R |
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