NVD6495NLT4G-VF01 onsemi
Виробник: onsemi
Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис NVD6495NLT4G-VF01 onsemi
Description: MOSFET N-CH 100V 25A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Not For New Designs, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції NVD6495NLT4G-VF01 за ціною від 34.47 грн до 141.93 грн
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NVD6495NLT4G-VF01 | onsemi |
MOSFET NFET DPAK 100V 23A 56MOHM |
на замовлення 1944 шт: термін постачання 21-30 дні (днів) |
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NVD6495NLT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 25A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 6652 шт: термін постачання 21-31 дні (днів) |
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| NVD6495NLT4G-VF01 |
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Виробник: onsemi
MOSFET NFET DPAK 100V 23A 56MOHM
MOSFET NFET DPAK 100V 23A 56MOHM
на замовлення 1944 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.79 грн |
| 10+ | 82.68 грн |
| 100+ | 55.75 грн |
| 500+ | 47.29 грн |
| 1000+ | 38.55 грн |
| 2500+ | 36.16 грн |
| 5000+ | 34.47 грн |
| NVD6495NLT4G-VF01 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 25A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 100V 25A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 6652 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.93 грн |
| 10+ | 86.97 грн |
| 100+ | 58.66 грн |
| 500+ | 43.66 грн |
| 1000+ | 39.99 грн |