NVDS015N15MCT4G onsemi
Виробник: onsemi
Description: PTNG 150V 15MOHM DPAK AUTOMOTIVE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 61.3A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 55.61 грн |
| 5000+ | 52.69 грн |
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Технічний опис NVDS015N15MCT4G onsemi
Description: PTNG 150V 15MOHM DPAK AUTOMOTIVE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 61.3A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V, Power Dissipation (Max): 3.1W (Ta), 107.1W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 162µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V, Qualification: AEC-Q101.
Інші пропозиції NVDS015N15MCT4G за ціною від 50.75 грн до 198.23 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVDS015N15MCT4G | onsemi |
MOSFETs N-Channel Shielded Gate PowerTrench 150 V, 15 mohm, 61.3 A |
на замовлення 3365 шт: термін постачання 21-30 дні (днів) |
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NVDS015N15MCT4G | onsemi |
Description: PTNG 150V 15MOHM DPAK AUTOMOTIVE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 61.3A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V Power Dissipation (Max): 3.1W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 162µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V Qualification: AEC-Q101 |
на замовлення 29656 шт: термін постачання 21-31 дні (днів) |
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| NVDS015N15MCT4G |
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Виробник: onsemi
MOSFETs N-Channel Shielded Gate PowerTrench 150 V, 15 mohm, 61.3 A
MOSFETs N-Channel Shielded Gate PowerTrench 150 V, 15 mohm, 61.3 A
на замовлення 3365 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 166.10 грн |
| 10+ | 116.72 грн |
| 100+ | 73.30 грн |
| 500+ | 59.70 грн |
| 1000+ | 56.88 грн |
| 2500+ | 50.75 грн |
| NVDS015N15MCT4G |
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Виробник: onsemi
Description: PTNG 150V 15MOHM DPAK AUTOMOTIVE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 61.3A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
Qualification: AEC-Q101
Description: PTNG 150V 15MOHM DPAK AUTOMOTIVE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 61.3A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.1W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
Qualification: AEC-Q101
на замовлення 29656 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 198.23 грн |
| 10+ | 123.47 грн |
| 100+ | 84.85 грн |
| 500+ | 64.14 грн |
| 1000+ | 60.53 грн |