NVF2955T1G onsemi
Виробник: onsemi
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1000+ | 37.46 грн |
| 2000+ | 33.10 грн |
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Технічний опис NVF2955T1G onsemi
Description: MOSFET P-CH 60V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-223 (TO-261), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVF2955T1G за ціною від 35.41 грн до 98.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Gate-source voltage: ±20V Drain current: -2.6A Gate charge: 14.3nC On-state resistance: 154mΩ Power dissipation: 2.3W Case: SOT223 Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 685 шт: термін постачання 14-30 дні (днів) |
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NVF2955T1G | onsemi |
Description: MOSFET P-CH 60V 2.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2271 шт: термін постачання 21-31 дні (днів) |
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| NVF2955T1G | ON-Semiconductor |
Transistor P-Channel MOSFET; 60V; 20V; 185mOhm; 2,6A; 2,3W; -55°C ~ 175°C; NVF2955T1G TNVF2955t кількість в упаковці: 10 шт |
на замовлення 50 шт: термін постачання 28-31 дні (днів) |
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| NVF2955T1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -2.6A
Gate charge: 14.3nC
On-state resistance: 154mΩ
Power dissipation: 2.3W
Case: SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 84.12 грн |
| 10+ | 61.49 грн |
| 25+ | 50.69 грн |
| NVF2955T1G |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 65.51 грн |
| 100+ | 48.82 грн |
| 500+ | 37.25 грн |
| NVF2955T1G |
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Виробник: ON-Semiconductor
Transistor P-Channel MOSFET; 60V; 20V; 185mOhm; 2,6A; 2,3W; -55°C ~ 175°C; NVF2955T1G TNVF2955t
кількість в упаковці: 10 шт
Transistor P-Channel MOSFET; 60V; 20V; 185mOhm; 2,6A; 2,3W; -55°C ~ 175°C; NVF2955T1G TNVF2955t
кількість в упаковці: 10 шт
на замовлення 50 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 35.41 грн |