NVF3055-100T1G ON Semiconductor


ntf3055-100-d.pdf Виробник: ON Semiconductor

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Технічний опис NVF3055-100T1G ON Semiconductor

Description: MOSFET N-CH 60V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223 (TO-261), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V, Qualification: AEC-Q101.

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NVF3055-100T1G NVF3055-100T1G Виробник : ON Semiconductor ntf3055-100-d.pdf Trans MOSFET N-CH 60V 3A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
NVF3055-100T1G NVF3055-100T1G Виробник : onsemi ntf3055-100-d.pdf Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVF3055-100T1G NVF3055-100T1G Виробник : onsemi ntf3055-100-d.pdf Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVF3055-100T1G NVF3055-100T1G Виробник : onsemi NTF3055_100_D-2318694.pdf MOSFET NFET 60V 3A 0.100R
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