NVH4L015N065SC1 onsemi
Виробник: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 650V
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 4386.74 грн |
10+ | 3840.03 грн |
30+ | 3712.05 грн |
90+ | 3243.38 грн |
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Технічний опис NVH4L015N065SC1 onsemi
Description: SIC MOS TO247-4L 650V, Packaging: Tray, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 142A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 25mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVH4L015N065SC1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NVH4L015N065SC1 | Виробник : ON Semiconductor | Trans MOSFET N-CH SiC 650V 142A Automotive Tube |
товар відсутній |
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NVH4L015N065SC1 | Виробник : onsemi | MOSFET SIC MOS TO247-4L 650V |
товар відсутній |