NVHL075N065SC1 onsemi
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET, NC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET, NC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Qualification: AEC-Q101
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1348.52 грн |
| 30+ | 1076.53 грн |
| 120+ | 1009.24 грн |
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Технічний опис NVHL075N065SC1 onsemi
Description: SILICON CARBIDE (SIC) MOSFET, NC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V, Qualification: AEC-Q101.
Інші пропозиції NVHL075N065SC1 за ціною від 832.42 грн до 1464.5 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVHL075N065SC1 | Виробник : onsemi |
 MOSFET SIC MOS TO247-3L 650V 75MOHM |
на замовлення 412 шт: термін постачання 21-30 дні (днів) |
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| NVHL075N065SC1 | Виробник : ON Semiconductor |
SiC Power MOSFET, N Channel Automotive AEC-Q101 |
товар відсутній |
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| NVHL075N065SC1 | Виробник : ON Semiconductor |
SiC Power MOSFET, N Channel Automotive AEC-Q101 |
товар відсутній |