на замовлення 7785 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 43.47 грн |
| 14+ | 26.32 грн |
| 100+ | 14.68 грн |
| 500+ | 11.14 грн |
| 1000+ | 9.86 грн |
| 3000+ | 8.81 грн |
| 6000+ | 7.90 грн |
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Технічний опис NVJD4158CT1G onsemi
Description: MOSFET N/P-CH 30V 0.25A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 270mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVJD4158CT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVJD4158CT1G | Виробник : ONSEMI |
 NVJD4158CT1G Multi channel transistors |
товару немає в наявності |
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NVJD4158CT1G | Виробник : onsemi |
Description: MOSFET N/P-CH 30V 0.25A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVJD4158CT1G | Виробник : onsemi |
Description: MOSFET N/P-CH 30V 0.25A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |