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NVJD4158CT1G onsemi

3F60ECF12B27259CE670DCA648D1822C424E62A73A917FF449280C81E0207686.pdf
Виробник: onsemi
MOSFETs Complementary Small Signal MOSFET
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термін постачання 21-30 дні (днів)
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Технічний опис NVJD4158CT1G onsemi

Description: MOSFET N/P-CH 30V 0.25A SC88, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: SC-88/SC70-6/SOT-363, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 270mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

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NVJD4158CT1G NVJD4158CT1G onsemi ntjd4158c-d.pdf Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVJD4158CT1G NVJD4158CT1G onsemi ntjd4158c-d.pdf Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
NVJD4158CT1G ntjd4158c-d.pdf
NVJD4158CT1G
Виробник: onsemi
Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NVJD4158CT1G ntjd4158c-d.pdf
NVJD4158CT1G
Виробник: onsemi
Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.