Технічний опис NVLJD4007NZTBG ON Semiconductor
Description: MOSFET 2N-CH 30V 0.245A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 755mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 245mA, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: 6-WDFN (2x2), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVLJD4007NZTBG
| Фото | Назва | Виробник | Інформація |
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| NVLJD4007NZTBG | Виробник : ON Semiconductor |
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на замовлення 2130 шт: термін постачання 14-28 дні (днів) |
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NVLJD4007NZTBG | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 0.245A Automotive 6-Pin WDFN EP T/R |
товару немає в наявності |
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NVLJD4007NZTBG | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 0.245A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 755mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 245mA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Rds On (Max) @ Id, Vgs: 7Ohm @ 125mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: 6-WDFN (2x2) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |