NVLJS053N12MCLTAG onsemi
Виробник: onsemi
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
6+ | 48.86 грн |
10+ | 40.96 грн |
100+ | 28.36 грн |
500+ | 22.24 грн |
1000+ | 18.92 грн |
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Технічний опис NVLJS053N12MCLTAG onsemi
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V, Power Dissipation (Max): 620mW (Ta), Vgs(th) (Max) @ Id: 3V @ 30µA, Supplier Device Package: 6-UDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V.
Інші пропозиції NVLJS053N12MCLTAG за ціною від 17.14 грн до 55.49 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NVLJS053N12MCLTAG | Виробник : onsemi | MOSFET PTNG 120V LL NCH IN UDFN 2.0X2.0 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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NVLJS053N12MCLTAG | Виробник : ON Semiconductor | Power MOSFET, Single N-Channel |
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NVLJS053N12MCLTAG | Виробник : ON Semiconductor | Power MOSFET, Single N-Channel Automotive AEC-Q101 |
товар відсутній |
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NVLJS053N12MCLTAG | Виробник : onsemi |
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V Power Dissipation (Max): 620mW (Ta) Vgs(th) (Max) @ Id: 3V @ 30µA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V |
товар відсутній |