Технічний опис NVLJWD040N06CLTAG ON Semiconductor
Description: MOSFET 2N-CH 60V 5.5A 6WDFNW, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Ta), 24W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V, Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 13µA, Supplier Device Package: 6-WDFNW (2.2x2.3), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції NVLJWD040N06CLTAG
Фото | Назва | Виробник | Інформація |
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NVLJWD040N06CLTAG | Виробник : onsemi |
Description: MOSFET 2N-CH 60V 5.5A 6WDFNW Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: 6-WDFNW (2.2x2.3) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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NVLJWD040N06CLTAG | Виробник : onsemi | MOSFET T6 60V LL 2X2 WDFNW6 |
товар відсутній |