
NVLJWS011N04CLTAG onsemi

Description: T6 40V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2061 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
4+ | 99.24 грн |
10+ | 57.97 грн |
25+ | 48.31 грн |
100+ | 35.02 грн |
250+ | 29.96 грн |
500+ | 26.85 грн |
1000+ | 23.84 грн |
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Технічний опис NVLJWS011N04CLTAG onsemi
Description: T6 40V LL 2X2 WDFNW6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V, Power Dissipation (Max): 2.4W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: 6-WDFNW (2.05x2.05), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVLJWS011N04CLTAG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVLJWS011N04CLTAG | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
|
NVLJWS011N04CLTAG | Виробник : onsemi |
![]() |
товару немає в наявності |