NVLJWS022N06CLTAG onsemi
Виробник: onsemiDescription: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 21.23 грн |
| 6000+ | 18.83 грн |
| 9000+ | 18.02 грн |
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Технічний опис NVLJWS022N06CLTAG onsemi
Description: T6 60V LL 2X2 WDFNW6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, Power Dissipation (Max): 2.4W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2V @ 77µA, Supplier Device Package: 6-WDFNW (2.05x2.05), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NVLJWS022N06CLTAG за ціною від 17.54 грн до 90.79 грн
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NVLJWS022N06CLTAG | Виробник : onsemi |
Description: T6 60V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 14657 шт: термін постачання 21-31 дні (днів) |
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| NVLJWS022N06CLTAG | Виробник : onsemi |
MOSFETs Single N-Channel uCool Power MOSFET 60 V, 25 A, 21 mohm |
на замовлення 1431 шт: термін постачання 21-30 дні (днів) |
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| NVLJWS022N06CLTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6 Case: WDFNW6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.6nC On-state resistance: 21mΩ Power dissipation: 14W Drain current: 25A Pulsed drain current: 90A Gate-source voltage: ±20V Drain-source voltage: 60V кількість в упаковці: 1 шт |
товару немає в наявності |
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| NVLJWS022N06CLTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6 Case: WDFNW6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.6nC On-state resistance: 21mΩ Power dissipation: 14W Drain current: 25A Pulsed drain current: 90A Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |