Технічний опис NVMFD5485NLT3G ON Semiconductor
Description: MOSFET 2N-CH 60V 5.3A DFN8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V, Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Part Status: Obsolete.
Інші пропозиції NVMFD5485NLT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
NVMFD5485NLT3G | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 5.3A Automotive 8-Pin DFN EP T/R |
товару немає в наявності |
|
 |
NVMFD5485NLT3G | Виробник : onsemi |
Description: MOSFET 2N-CH 60V 5.3A DFN8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Part Status: Obsolete |
товару немає в наявності |
|
 |
NVMFD5485NLT3G | Виробник : ON Semiconductor |
MOSFET Pwr MOSFET 60V 20A 44mOhm Dual N-CH |
товару немає в наявності |