Технічний опис NVMFD5853NWFT1G ON Semiconductor
Description: MOSFET 2N-CH 40V 12A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 12A, Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual).
Інші пропозиції NVMFD5853NWFT1G
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NVMFD5853NWFT1G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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NVMFD5853NWFT1G | Виробник : ON Semiconductor |
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