NVMFD5873NLT1G onsemi

Description: MOSFET 2N-CH 60V 10A 8DFN, Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 10A, Drain to Source Voltage (Vdss): 60V, Power - Max: 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V.