Технічний опис NVMFD5877NLT1G onsemi
Description: MOSFET 2N-CH 60V 6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V, Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFD5877NLT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NVMFD5877NLT1G | Виробник : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm Case: DFN8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 12W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD кількість в упаковці: 3000 шт |
товару немає в наявності |
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NVMFD5877NLT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 60V 6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFD5877NLT1G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm Case: DFN8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 12W Polarisation: unipolar Kind of package: reel; tape Dimensions: 5x6mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
товару немає в наявності |