Технічний опис NVMFD5C470NLWFT1G ON Semiconductor
Description: MOSFET 2N-CH 40V 11A/36A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 24W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 20µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFD5C470NLWFT1G
| Фото | Назва | Виробник | Інформація |
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NVMFD5C470NLWFT1G | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 40V 11A Automotive 8-Pin DFN EP T/R |
товару немає в наявності |
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NVMFD5C470NLWFT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 40V 11A Automotive AEC-Q101 8-Pin DFN EP T/R |
товару немає в наявності |
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NVMFD5C470NLWFT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 11A/36A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFD5C470NLWFT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 11A/36A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 24W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFD5C470NLWFT1G | Виробник : onsemi |
MOSFET T6 40V LL S08FL DS |
товару немає в наявності |