Технічний опис NVMFD6H852NLT1G ON Semiconductor
Description: MOSFET N-CH 80V 7A/25A 8DFN DL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 2V @ 26µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVMFD6H852NLT1G
| Фото | Назва | Виробник | Інформація |
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| NVMFD6H852NLT1G | Виробник : ON Semiconductor |
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на замовлення 1400 шт: термін постачання 14-28 дні (днів) |
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NVMFD6H852NLT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 7A Automotive 8-Pin DFN EP T/R |
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NVMFD6H852NLT1G | Виробник : onsemi |
Description: MOSFET N-CH 80V 7A/25A 8DFN DL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Qualification: AEC-Q101 |
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NVMFD6H852NLT1G | Виробник : onsemi |
Description: MOSFET N-CH 80V 7A/25A 8DFN DL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Qualification: AEC-Q101 |
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