NVMFS014P04M8LT1G onsemi
Виробник: onsemiDescription: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
на замовлення 34500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 32.71 грн |
| 3000+ | 29.62 грн |
| 4500+ | 28.48 грн |
| 7500+ | 26.24 грн |
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Технічний опис NVMFS014P04M8LT1G onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V, Power Dissipation (Max): 3.6W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 420µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS014P04M8LT1G за ціною від 26.93 грн до 107.60 грн
| Фото | Назва | Виробник | Інформація |
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NVMFS014P04M8LT1G | Виробник : onsemi |
MOSFETs Power MOSFET, Single P-Channel, -40 V, 13.8 mohm a. -10V, -52.1 A |
на замовлення 6937 шт: термін постачання 21-30 дні (днів) |
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NVMFS014P04M8LT1G | Виробник : onsemi |
Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 35605 шт: термін постачання 21-31 дні (днів) |
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NVMFS014P04M8LT1G | Виробник : ON Semiconductor |
Trans MOSFET P-CH 40V 12.5A 5-Pin(4+Tab) SO-FL T/R |
товару немає в наявності |
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NVMFS014P04M8LT1G | Виробник : ON Semiconductor |
Trans MOSFET P-CH 40V 12.5A Automotive AEC-Q101 5-Pin SO-FL EP T/R |
товару немає в наявності |
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| NVMFS014P04M8LT1G | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -52.1A; Idm: -268A; 30W; DFN5 Mounting: SMD Case: DFN5 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -268A Drain current: -52.1A Drain-source voltage: -40V Gate charge: 26.5nC On-state resistance: 13.8mΩ Power dissipation: 30W Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товару немає в наявності |
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| NVMFS014P04M8LT1G | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -52.1A; Idm: -268A; 30W; DFN5 Mounting: SMD Case: DFN5 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -268A Drain current: -52.1A Drain-source voltage: -40V Gate charge: 26.5nC On-state resistance: 13.8mΩ Power dissipation: 30W Gate-source voltage: ±20V |
товару немає в наявності |