NVMFS021N10MCLT1G onsemi
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 1500+ | 20.33 грн |
| 3000+ | 18.72 грн |
| 4500+ | 18.61 грн |
| 7500+ | 17.25 грн |
Відгуки про товар
Написати відгук
Технічний опис NVMFS021N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 3V @ 42µA, Power Dissipation (Max): 3.6W (Ta), 49W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції NVMFS021N10MCLT1G за ціною від 17.97 грн до 81.33 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVMFS021N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FLInput Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3V @ 42µA Power Dissipation (Max): 3.6W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
на замовлення 30649 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NVMFS021N10MCLT1G | onsemi |
MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm |
на замовлення 4452 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| NVMFS021N10MCLT1G | ONN |
|
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| NVMFS021N10MCLT1G |
![]() |
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
на замовлення 30649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 76.91 грн |
| 10+ | 51.85 грн |
| 100+ | 34.45 грн |
| 500+ | 25.18 грн |
| NVMFS021N10MCLT1G |
![]() |
Виробник: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm
MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm
на замовлення 4452 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 81.33 грн |
| 10+ | 54.79 грн |
| 100+ | 31.86 грн |
| 500+ | 25.23 грн |
| 1000+ | 23.89 грн |
| 1500+ | 17.97 грн |
| NVMFS021N10MCLT1G |
![]() |
Виробник: ONN
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)


