на замовлення 605 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 117.97 грн |
| 10+ | 82.87 грн |
| 100+ | 50.33 грн |
| 500+ | 39.99 грн |
| 1000+ | 37.58 грн |
| 1500+ | 32.67 грн |
| 3000+ | 31.09 грн |
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Технічний опис NVMFS024N06CT1G onsemi
Description: MOSFET N-CH 60V 8A/25A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V, Power Dissipation (Max): 3.4W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS024N06CT1G за ціною від 40.62 грн до 124.07 грн
| Фото | Назва | Виробник | Інформація |
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NVMFS024N06CT1G | Виробник : onsemi |
 Description: MOSFET N-CH 60V 8A/25A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Power Dissipation (Max): 3.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 1415 шт: термін постачання 21-31 дні (днів) |
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NVMFS024N06CT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 60V 8A 5-Pin(4+Tab) SO-FL T/R |
товару немає в наявності |
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| NVMFS024N06CT1G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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NVMFS024N06CT1G | Виробник : onsemi |
Description: MOSFET N-CH 60V 8A/25A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Power Dissipation (Max): 3.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
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| NVMFS024N06CT1G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |