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NVMFS040N10MCLT1G

NVMFS040N10MCLT1G onsemi

nvmfs040n10mcl-d.pdf
Виробник: onsemi
MOSFETs PTNG 100V LL SO8FL
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
4+94.56 грн
10+57.63 грн
100+32.99 грн
500+25.94 грн
1000+22.20 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
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Технічний опис NVMFS040N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 26µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції NVMFS040N10MCLT1G

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NVMFS040N10MCLT1G NVMFS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFS040N10MCLT1G NVMFS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS040N10MCLT1G ONSEMI nvmfs040n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
NVMFS040N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
NVMFS040N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.