NVMFS5830NLWFT1G

NVMFS5830NLWFT1G ON Semiconductor


nvmfs5830nl-d.pdf Виробник: ON Semiconductor
Trans MOSFET N-CH 40V 29A Automotive 5-Pin(4+Tab) SO-FL T/R
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Технічний опис NVMFS5830NLWFT1G ON Semiconductor

Description: MOSFET N-CH 40V 29A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V, Qualification: AEC-Q101.

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NVMFS5830NLWFT1G NVMFS5830NLWFT1G Виробник : onsemi nvmfs5830nl-d.pdf Description: MOSFET N-CH 40V 29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5830NLWFT1G NVMFS5830NLWFT1G Виробник : onsemi NVMFS5830NL_D-1814769.pdf MOSFET Pwr MOSFET 40V 185A 2.3mOhm SGL N-CH
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