NVMFS5834NLWFT1G-UM onsemi
Виробник: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Відгуки про товар
Написати відгук
Технічний опис NVMFS5834NLWFT1G-UM onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Cut Tape (CT), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 107W (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції NVMFS5834NLWFT1G-UM
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
NVMFS5834NLWFT1G-UM | onsemi |
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| NVMFS5834NLWFT1G-UM |
![]() |
Виробник: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.


