Технічний опис NVMFS5C410NWFET1G ON Semiconductor
Description: T6-40V N 0.92 MOHMS SL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 166W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFS5C410NWFET1G
Фото | Назва | Виробник | Інформація |
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NVMFS5C410NWFET1G | Виробник : ON Semiconductor |
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NVMFS5C410NWFET1G | Виробник : ONSEMI |
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NVMFS5C410NWFET1G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFS5C410NWFET1G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFS5C410NWFET1G | Виробник : onsemi |
![]() |
товару немає в наявності |