NVMFS5C420NWFT1G onsemi
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SO8FL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Qualification: AEC-Q101
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Технічний опис NVMFS5C420NWFT1G onsemi
Description: POWER MOSFET, N-CHANNEL, SO8FL,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS5C420NWFT1G за ціною від 98.68 грн до 327.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NVMFS5C420NWFT1G | onsemi |
MOSFETs Power MOSFET, N-Channel, SO8FL, 40 V, 1.1 mohm, 268 A Wettable Flank Option |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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NVMFS5C420NWFT1G | onsemi |
Description: POWER MOSFET, N-CHANNEL, SO8FL, Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 34430 шт: термін постачання 21-31 дні (днів) |
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| NVMFS5C420NWFT1G |
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Виробник: onsemi
MOSFETs Power MOSFET, N-Channel, SO8FL, 40 V, 1.1 mohm, 268 A Wettable Flank Option
MOSFETs Power MOSFET, N-Channel, SO8FL, 40 V, 1.1 mohm, 268 A Wettable Flank Option
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 263.13 грн |
| 10+ | 183.99 грн |
| 100+ | 117.00 грн |
| 1000+ | 98.68 грн |
| NVMFS5C420NWFT1G |
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Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SO8FL,
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: POWER MOSFET, N-CHANNEL, SO8FL,
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 34430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 327.48 грн |
| 10+ | 208.22 грн |
| 100+ | 147.35 грн |
| 500+ | 113.91 грн |