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NVMFS5C442NWFAFT1G onsemi


804E24787EDA45F202D37E77F39393E45261B59C6B3DFCA8C6F5A4CB7C80C54E.pdf
Виробник: onsemi
MOSFETs T6-D3F 40V NFET
на замовлення 1448 шт:

термін постачання 21-30 дні (днів)
КількістьЦіна
2+194.88 грн
10+124.82 грн
100+74.71 грн
500+60.47 грн
1000+57.44 грн
1500+56.67 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис NVMFS5C442NWFAFT1G onsemi

Description: MOSFET N-CH 40V 29A/140A 5DFN, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc), Qualification: AEC-Q101, Grade: Automotive.

Інші пропозиції NVMFS5C442NWFAFT1G

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NVMFS5C442NWFAFT1G NVMFS5C442NWFAFT1G onsemi nvmfs5c442n-d.pdf Description: MOSFET N-CH 40V 29A/140A 5DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFS5C442NWFAFT1G NVMFS5C442NWFAFT1G onsemi nvmfs5c442n-d.pdf Description: MOSFET N-CH 40V 29A/140A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
NVMFS5C442NWFAFT1G nvmfs5c442n-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFS5C442NWFAFT1G nvmfs5c442n-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.