
на замовлення 3000 шт:
термін постачання 133-142 дні (днів)
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2+ | 223.16 грн |
10+ | 142.98 грн |
25+ | 114.77 грн |
100+ | 86.07 грн |
250+ | 83.87 грн |
500+ | 69.08 грн |
1000+ | 62.17 грн |
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Технічний опис NVMFS5C670NWFT1G onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V, Power Dissipation (Max): 3.6W (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 4V @ 53µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFS5C670NWFT1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVMFS5C670NWFT1G | Виробник : ON Semiconductor |
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товару немає в наявності |
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NVMFS5C670NWFT1G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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NVMFS5C670NWFT1G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |