NVMFS5H610NLT1G onsemi
Виробник: onsemiDescription: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Power Dissipation (Max): 3.6W (Tc), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 75.42 грн |
| 10+ | 48.39 грн |
| 100+ | 33.52 грн |
| 500+ | 25.17 грн |
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Технічний опис NVMFS5H610NLT1G onsemi
Description: T8 60V LOW COSS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V, Power Dissipation (Max): 3.6W (Tc), 52W (Tc), Vgs(th) (Max) @ Id: 2V @ 40µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS5H610NLT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NVMFS5H610NLT1G | Виробник : ON Semiconductor |
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NVMFS5H610NLT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 60V 13A Automotive 5-Pin SO-FL EP T/R |
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NVMFS5H610NLT1G | Виробник : onsemi |
Description: T8 60V LOW COSS Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V Power Dissipation (Max): 3.6W (Tc), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |