на замовлення 2444 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 352.81 грн |
| 10+ | 292.46 грн |
| 25+ | 239.82 грн |
| 100+ | 205.56 грн |
| 250+ | 194.36 грн |
| 500+ | 187.11 грн |
| 1000+ | 166.03 грн |
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Технічний опис NVMFS6H800NT1G onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 330µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V.
Інші пропозиції NVMFS6H800NT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NVMFS6H800NT1G Код товару: 177250 |
 Різні комплектуючі > Різні комплектуючі 1 |
товар відсутній
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NVMFS6H800NT1G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8 Mounting: SMD Drain current: 20A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 2.1mΩ Power dissipation: 100W Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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NVMFS6H800NT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 28A Automotive 5-Pin(4+Tab) SO-FL T/R |
товар відсутній |
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NVMFS6H800NT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 28A Automotive 5-Pin SO-FL EP T/R |
товар відсутній |
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NVMFS6H800NT1G | Виробник : onsemi |
Description: MOSFET N-CH 80V 28A/203A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V |
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NVMFS6H800NT1G | Виробник : onsemi |
Description: MOSFET N-CH 80V 28A/203A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V |
товар відсутній |
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NVMFS6H800NT1G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8 Mounting: SMD Drain current: 20A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 2.1mΩ Power dissipation: 100W Polarisation: unipolar |
товар відсутній |