NVMFS6H824NLT1G ON Semiconductor

Description: MOSFET N-CH 80V 20A/110A 5DFN, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 140µA, Power Dissipation (Max): 3.8W (Ta), 116W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive.