NVMFS6H824NLWFT1G onsemi
Виробник: onsemiDescription: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 85.34 грн |
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Технічний опис NVMFS6H824NLWFT1G onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2V @ 140µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS6H824NLWFT1G за ціною від 80.57 грн до 257.30 грн
| Фото | Назва | Виробник | Інформація |
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NVMFS6H824NLWFT1G | Виробник : onsemi |
MOSFETs Power MOSFET 80V, 110A, 4 mohm, Single N-Channel Wettable flank |
на замовлення 1420 шт: термін постачання 21-30 дні (днів) |
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NVMFS6H824NLWFT1G | Виробник : onsemi |
Description: MOSFET N-CH 80V 20A/110A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2V @ 140µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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