NVMFS6H824NWFT1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 54.24 грн |
| 3000+ | 49.30 грн |
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Технічний опис NVMFS6H824NWFT1G onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS6H824NWFT1G за ціною від 55.71 грн до 175.50 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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NVMFS6H824NWFT1G | ON Semiconductor |
Trans MOSFET N-CH 80V 19A Automotive 5-Pin DFNW EP T/R |
на замовлення 169500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H824NWFT1G | onsemi |
Description: MOSFET N-CH 80V 19A/103A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1483765 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H824NWFT1G | onsemi |
MOSFETs T8 80V U8FL |
на замовлення 2307 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| NVMFS6H824NWFT1G |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 80V 19A Automotive 5-Pin DFNW EP T/R
Trans MOSFET N-CH 80V 19A Automotive 5-Pin DFNW EP T/R
на замовлення 169500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 65.83 грн |
| NVMFS6H824NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1483765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.50 грн |
| 10+ | 108.37 грн |
| 100+ | 74.05 грн |
| 500+ | 55.71 грн |
| NVMFS6H824NWFT1G |
|
Виробник: onsemi
MOSFETs T8 80V U8FL
MOSFETs T8 80V U8FL
на замовлення 2307 шт:
термін постачання 21-30 дні (днів)