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Технічний опис NVMFS6H836NLWFT1G onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 95µA, Power Dissipation (Max): 3.7W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Інші пропозиції NVMFS6H836NLWFT1G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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NVMFS6H836NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 16A/77A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 95µA Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
|
|
NVMFS6H836NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 16A/77A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 95µA Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| NVMFS6H836NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 77A Pulsed drain current: 449A Power dissipation: 45W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
NVMFS6H836NLWFT1G | ON Semiconductor |
 Trans MOSFET N-CH 80V 16A 5-Pin DFNW EP T/R Automotive AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| NVMFS6H836NLWFT1G |
Виробник: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 16A/77A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS6H836NLWFT1G |
Виробник: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 16A/77A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS6H836NLWFT1G |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 77A
Pulsed drain current: 449A
Power dissipation: 45W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 77A; Idm: 449A; 45W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 77A
Pulsed drain current: 449A
Power dissipation: 45W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS6H836NLWFT1G |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 80V 16A 5-Pin DFNW EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 80V 16A 5-Pin DFNW EP T/R Automotive AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.