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NVMFS6H836NT3G onsemi


nvmfs6h836n-d.pdf
Виробник: onsemi
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+114.69 грн
10+80.34 грн
100+55.17 грн
500+41.12 грн
1000+38.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
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Технічний опис NVMFS6H836NT3G onsemi

Description: T8 80V SO8FL, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 95µA, Power Dissipation (Max): 3.7W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc), FET Type: N-Channel.

Інші пропозиції NVMFS6H836NT3G

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NVMFS6H836NT3G NVMFS6H836NT3G onsemi nvmfs6h836n-d.pdf Description: T8 80V SO8FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NVMFS6H836NT3G nvmfs6h836n-d.pdf
Виробник: onsemi
Description: T8 80V SO8FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.