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NVMFS6H852NWFT1G onsemi

Name: NVMFS6H852NWFT1G
Brand: onsemi
SKU: 30319626-3
Price: 403.95 UAH
Availability: InStock

Виробник: onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101

на замовлення 1470 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
3+	134.65 грн
10+	82.25 грн
100+	55.19 грн
500+	40.90 грн

Мінімальне замовлення: 3

В кошику од. на суму грн.

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Технічний опис NVMFS6H852NWFT1G onsemi

Description: MOSFET N-CH 80V 10A/40A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 45µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V, Qualification: AEC-Q101.

Інші пропозиції NVMFS6H852NWFT1G

Назва	Виробник	Інформація	Доступність	Ціна
NVMFS6H852NWFT1G	Виробник : ON Semiconductor	Trans MOSFET N-CH 80V 10A Automotive AEC-Q101 5-Pin SO-FL EP T/R	товару немає в наявності	В кошику од. на суму грн.
NVMFS6H852NWFT1G	Виробник : onsemi	Description: MOSFET N-CH 80V 10A/40A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
NVMFS6H852NWFT1G	Виробник : onsemi	MOSFETs TRENCH 8 80V NFET	товару немає в наявності	В кошику од. на суму грн.
NVMFS6H852NWFT1G	Виробник : ONSEMI	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 200A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 14.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC	товару немає в наявності	В кошику од. на суму грн.