NVMFS6H858NLT1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1500+ | 22.21 грн |
| 3000+ | 19.63 грн |
Відгуки про товар
Написати відгук
Технічний опис NVMFS6H858NLT1G onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції NVMFS6H858NLT1G за ціною від 23.33 грн до 80.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMFS6H858NLT1G | onsemi |
Description: MOSFET N-CH 80V 8.7A/30A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 3129 шт: термін постачання 21-31 дні (днів) |
|
||||||||
 |
NVMFS6H858NLT1G | onsemi |
MOSFET T8 80V LL SO8FL |
на замовлення 1470 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||
| NVMFS6H858NLT1G | ON Semiconductor |
|
на замовлення 1448 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| NVMFS6H858NLT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3129 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.88 грн |
| 10+ | 48.64 грн |
| 100+ | 32.02 грн |
| 500+ | 23.33 грн |
| NVMFS6H858NLT1G |
|
Виробник: onsemi
MOSFET T8 80V LL SO8FL
MOSFET T8 80V LL SO8FL
на замовлення 1470 шт:
термін постачання 21-30 дні (днів)
| NVMFS6H858NLT1G |
|
Виробник: ON Semiconductor
на замовлення 1448 шт:
термін постачання 14-28 дні (днів)