| Кількість | Ціна |
|---|---|
| 3+ | 118.41 грн |
| 10+ | 89.16 грн |
| 100+ | 55.26 грн |
| 500+ | 43.98 грн |
| 1000+ | 36.16 грн |
| 1500+ | 35.73 грн |
| 3000+ | 35.52 грн |
Відгуки про товар
Написати відгук
Технічний опис NVMFSW6D1N08HT1G onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 120µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V.
Інші пропозиції NVMFSW6D1N08HT1G за ціною від 58.07 грн до 222.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVMFSW6D1N08HT1G | onsemi |
 Description: MOSFET N-CH 80V 17A/89A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
| NVMFSW6D1N08HT1G | onsemi |
Description: MOSFET N-CH 80V 17A/89A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
| NVMFSW6D1N08HT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 118.94 грн |
| 10+ | 93.84 грн |
| 100+ | 73.00 грн |
| 500+ | 58.07 грн |
| NVMFSW6D1N08HT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Description: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 179+ | 222.02 грн |