NVMFWD016N06CT1G onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис NVMFWD016N06CT1G onsemi
Description: MOSFET 2N-CH 60V 9A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 36W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V, Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції NVMFWD016N06CT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
NVMFWD016N06CT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 60V 9A/32A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|
 |
NVMFWD016N06CT1G | Виробник : onsemi |
 MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO |
товар відсутній |